Semiconductor International, January 1st, 2001
The challenges of continued scaling to smaller device structures and thinner films is perhaps felt most strongly in the area of gate oxides. Thermally grown oxides, which are inherently of very high quality, continue to be the dominant material used. But in order to maximize the drive current between the source and the drain of the transistor, thermal oxides must be very thin. For example, in Intel's 30 nm gate length CMOS transistor announced at the International Electron Devices Meeting (IEDM) in December (see Industry Watch, p. 15, for details), the gate oxide measures 0.8 nm thick. That'...
HighBeam Research, Free Preview: 'Deuterium: The Secret Ingredient for Gate Oxides?'... Full Membership required for unlimited access. Free 7-day trial.
Subscribers: HighBeam content is only available to HighBeam subscribers. Click the link above for more information.
